? semiconductor components industries, llc, 2003 february, 2003 - rev. 4 1 publication order number: 2N5457/d 2N5457, 2n5458 preferred device jfets - general purpose n- channel - depletion n-channel junction field effect transistors, depletion mode (type a) designed for audio and switching applications. ? n-channel for higher gain ? drain and source interchangeable ? high ac input impedance ? high dc input resistance ? low transfer and input capacitance ? low cross-modulation and intermodulation distortion ? unibloc plastic encapsulated package maximum ratings rating symbol value unit drain -source voltage v ds 25 vdc drain - gate voltage v dg 25 vdc reverse gate - source voltage v gsr -25 vdc gate current i g 10 madc total device dissipation @ t a = 25 c derate above 25 c p d 310 2.82 mw mw/ c operating junction temperature t j 135 c storage temperature range t stg - 65 to +150 c device package shipping ordering information 2N5457 to-92 to-92 case 29 style 5 5000 units/box 3 2 1 preferred devices are recommended choices for future use and best overall value. 2n5458 to-92 5000 units/box y = year ww = work week marking diagrams 2n 5457 yww 2n 5458 yww http://onsemi.com 1 drain 2 source 3 gate
2N5457, 2n5458 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate - source breakdown voltage (i g = -10 adc, v ds = 0) v (br)gss -25 - - vdc gate reverse current (v gs = -15 vdc, v ds = 0) (v gs = -15 vdc, v ds = 0, t a = 100 c) i gss - - - - - 1.0 -200 nadc gate-source cutoff voltage 2N5457 (v ds = 15 vdc, i d = 10 nadc) 2n5458 v gs(off) -0.5 -1.0 - - -6.0 -7.0 vdc gate-source voltage (v ds = 15 vdc, i d = 100 adc) 2N5457 (v ds = 15 vdc, i d = 200 adc) 2n5458 v gs - - -2.5 -3.5 - - vdc on characteristics zero-gate-v oltage drain current (note 1) 2N5457 (v ds = 15 vdc, v gs = 0) 2n5458 i dss 1.0 2.0 3.0 6.0 5.0 9.0 madc dynamic characteristics forward transfer admittance (note 1) 2N5457 (v ds = 15 vdc, v gs = 0, f = 1 khz) 2n5458 |y fs | 1000 1500 3000 4000 5000 5500 mhos output admittance common source (note 1) (v ds = 15 vdc, v gs = 0, f = 1 khz) |y os | - 10 50 mhos input capacitance (v ds = 15 vdc, v gs = 0, f = 1 khz) c iss - 4.5 7.0 pf reverse transfer capacitance (v ds = 15 vdc, v gs = 0, f = 1 khz) c rss - 1.5 3.0 pf 1. pulse width 630 ms, duty cycle 10%.
2N5457, 2n5458 http://onsemi.com 3 figure 1. noise figure versus source resistance v ds , drain-source voltage (volts) figure 2. typical drain characteristics v gs , gate-source voltage (volts) figure 3. common source transfer characteristics 1.0 0.4 0.2 0 -1.2 0.8 0.6 0 5 10 15 20 25 0 0.6 0.4 0.2 0.8 1.2 1.0 -0.8 -0.4 0 1.2 , drain current (ma) d i , drain current (ma) d i v ds = 15 v v gs = 0 v -0.2 v -0.4 v -0.6 v -0.8 v -1.0 v v gs(off) -1.2 v v gs(off) -1.2 v r s , source resistance (megohms) 14 12 10 8 6 4 2 0 nf, noise figure (db) 0.001 0.01 0.1 1.0 10 v ds = 15 v v gs = 0 f = 1 khz typical characteristics for 2N5457 only
2N5457, 2n5458 http://onsemi.com 4 v ds , drain-source voltage (volts) figure 4. typical drain characteristics v gs , gate-source voltage (volts) figure 5. common source transfer characteristics v ds , drain-source voltage (volts) figure 6. typical drain characteristics v gs , gate - source voltage (volts) figure 7. common source transfer characteristics 0 0 4 3 2 1 0 10 4 2 0 -4 5 510152025 5 4 3 2 1 0 -7 8 6 -6 -5 -4 -3 -2 -1 -5 -3 -2 -1 0 , drain current (ma) d i v ds = 15 v v gs(off) -5.8 v , drain current (ma) d i , drain current (ma) d i , drain current (ma) d i v ds = 15 v 10 4 2 0 8 6 0 5 10 15 20 25 v gs(off) -5.8 v v gs = 0 v v gs = 0 v -2 v -1 v -3 v -1 v -2 v -3 v -4 v -5 v v gs(off) -3.5 v v gs(off) -3.5 v note: note: graphical data is presented for dc conditions. tabular data is given for pulsed conditions (pulse width = 630 ms, duty cycle = 10%). under dc conditions, self heating in higher i dss units reduces i dss . typical characteristics for 2N5457 only
2N5457, 2n5458 http://onsemi.com 5 package dimensions case 29-11 issue al to-92 (to-226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x-x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 tyle 5: pin 1. drain 2. source 3. gate
2N5457, 2n5458 http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. typicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 2-9-1 kamimeguro, meguro-ku, tokyo, japan 153-0051 phone : 81-3-5773-3850 on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. 2N5457/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303-675-2175 or 800-344-3860 toll free usa/canada fax : 303-675-2176 or 800-344-3867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 800-282-9855 toll free usa/canada
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